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1mm Dia., Four-Element Segmented InGaAs Photodiode

#17-077, 1mm Dia., Four-Element Segmented InGaAs Photodiode

#17-077, 1mm Dia., Four-Element Segmented InGaAs Photodiode
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#17-077, 1mm Dia., Four-Element Segmented InGaAs Photodiode
Stock #17-077 New
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$295.00
Qty 1-4
$295.00
Qty 5+
$275.00
Volume Pricing
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Responsivity @ 1310nm (A/W):
0.85 minimum / 0.9 typical
Responsivity @ 1550nm (A/W):
0.9 minimum / 0.95 typical
Capacitance @ VR=5V (pF):
25
Noise Equivalent Power NEP (W/ Hz1/2):
1.20 x 10-14 @ 1550nm
Size of Active Area (mm):
1 Dia.
Element Gap (mm):
0.045
Connector:
TO-5
Dark Current @ VR=5V (nA):
Maximum: 15 Typical: 0.5
Maximum Reverse Voltage (V):
15
Rise/ Fall Time @ VR=5V (ns):
3 (typical)
Operating Temperature (°C):
-40 to +75
Storage Temperature (°C):
-55 to +125

Regulatory Compliance

RoHS:

Product Family Description

Segmented InGaAs Photodiodes feature large active areas divided into four individual elements. The four elements of these photodiodes have high response uniformity and low crosstalk, enabling their use in accurate nulling or centering applications. These photodiodes are stable over time and temperature, providing responsivity from 900 - 1700nm with excellent responsivity between 1100 - 1620nm. Segmented InGaAs Photodiodes are ideal for position detection, beam alignment, and beam profiling applications in the near-infrared spectrum. Each photodiode is packaged in an isolated TO-5 or TO-8 can with an antireflection coated window to increase throughput.

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