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80μm IR (1000-1650nm), InGaAs APD

Stock #59-688 Clearance
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$675.00
Qty 1
$675.00
Volume Pricing
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Operating Temperature (°C):
0 to 85
Active Area Diameter (mm):
0.10
Breakdown Voltage BDV, Id=100μA (V):
40/65 (Typical/Maximum)
Dark Current Id (nA):
3.00/12.00 (Typical/Maximum)
Gain (M):
25.00
Package:
TO-46
Peak Sensitivity Wavelength (nm):
1550.00
Photosensitivity S (A/W) @ λp:
1.00
Quantum Efficiency QE (%) @ λp:
75.00
Response Time (ns) RL=50Ω:
0.35
Storage Temperature (°C):
-55 to 125
Temperature Coefficient of BDV (V/°C):
0.10
Terminal Capacitance (pF):
1.00

Regulatory Compliance

RoHS:
Not Compliant

Product Family Description

  • Response Range From 900nm to 1700nm
  • Package Supports Single and Multi-Mode Fiber Coupling
  • 1.3 micron and 1.55 micron sensitivity
  • High Responsivity
  • Both Small Area (High Speed) and Large Area

InGaAs photodiodes offer superb response from 900nm to 1700nm, perfect for telecom and near IR detection. The 70 and 120 micron photodiodes are offered in isolated TO-46 packages with a lensed cap for single mode and multi-mode fiber coupling. These two sizes are also available with actively aligned FC receptacles. The 70 micron photodiode is perfect for high bandwidth applications while the 120 micron photodiode is perfect for active alignment applications. The 3mm photodiode is isolated in a TO-5 package with a broadband double sided AR-coated window. With the high shunt resistance, the 3mm photodiode is suitable for high sensitivity to weak signal applications.

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