Silicon Detector, Normal Response, 0.20mm2
#57-506
$25.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-40 to 100
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
0.20
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
2.8 x 10-15
Detectivity (cmHz1/2 /W)
1.6 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
4 @ 0V; 1 @ 10V
Dark Current Id (nA)
0.01 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
6 @ -10V/50Ω, 632nm
Mount
TO-18
RoHS
Compliant
Silicon Detector, Normal Response, 0.81mm2
#57-507
$25.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-40 to 100
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
0.81
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
6.2 x 10-15
Detectivity (cmHz1/2 /W)
1.45 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
8 @ 0V; 2 @ 10V
Dark Current Id (nA)
0.05 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
8 @ -10V/50Ω, 632nm
Mount
TO-18
RoHS
Compliant
Silicon Detector, Normal Response, 3.2mm2
#53-372
$25.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-40 to 100
Length of Leads (inches)
1.07
Outer Diameter (inches)
0.210
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
3.2
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
1.1 x 10-14
Detectivity (cmHz1/2 /W)
1.63 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
45 @ 0V; 12 @ 10V
Dark Current Id (nA)
0.15 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
10 @ -10V/50Ω, 632nm
Mount
TO-18
RoHS
Compliant
Silicon Detector, Normal Response, 5.1mm2
#53-371
$35.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-40 to 100
Length of Leads (inches)
1.50
Outer Diameter (inches)
0.360
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
5.1
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
1.4 x 10-14
Detectivity (cmHz1/2 /W)
1.61 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
85 @ 0V; 15 @ 10V
Dark Current Id (nA)
0.25 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
12 @ -10V/50Ω, 632nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, Normal Response, 16.4mm2
#54-034
$42.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-40 to 100
Length of Leads (inches)
1.50
Outer Diameter (inches)
0.550
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
16.4
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
1.9 x 10-14
Detectivity (cmHz1/2 /W)
2.13 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
330 @ 0V; 60 @ 10V
Dark Current Id (nA)
0.5 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
17 @ -10V/50Ω, 632nm
Mount
TO-8
RoHS
Compliant
Silicon Detector, Normal Response, 44.0mm2
#54-035
$58.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-40 to 100
Length of Leads (inches)
1.50
Outer Diameter (inches)
0.550
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
44.0
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
2.8 x 10-14
Detectivity (cmHz1/2 /W)
2.37 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
700 @ 0V; 130 @ 10V
Dark Current Id (nA)
1 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
24 @ -10V/50Ω, 632nm
Mount
TO-8
RoHS
Compliant
Silicon Detector, Normal Response, 100.0mm2
#53-373
$110.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-10 to 60
Length of Leads (inches)
BNC
Outer Diameter (inches)
0.975
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
100.0
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
3.9 x 10-14
Detectivity (cmHz1/2 /W)
2.56 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
1500 @ 0V; 300 @ 10V
Dark Current Id (nA)
2 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
43 @ -10V/50Ω, 632nm
Mount
BNC
RoHS
Compliant
Silicon Detector, Normal Response, 613.0mm2
#53-374
$375.00
Type
Biased: Normal Response Borosilicate Window
Operating Temperature (°C)
-10 to 60
Length of Leads (inches)
BNC
Outer Diameter (inches)
1.675
Typical Applications
High light levels, pulse detectors, AC light measurement
Voltage Bias, VBias (V)
-10
Active Area (mm2 )
613.0
Responsivity @ 970nm (A/W)
0.65
Noise Equivalent Power NEP (W/ Hz1/2 )
1.1 x 10-13
Detectivity (cmHz1/2 /W)
2.25 x 1013 @ -10V, 970nm
Terminal Capacitance (pF)
9500 @ 0V; 1800 @ 10V
Dark Current Id (nA)
15 @ 10V
Maximum Breakdown Voltage (V)
30
Rise Time (ns)
250 @ -10V/50Ω, 632nm
RoHS
Compliant
Silicon Detector, High Speed Response, 5.1mm2
#54-520
$69.00
Type
Biased: High Speed Response Borosilicate Window
Operating Temperature (°C)
-40 to 110
Length of Leads (inches)
0.5
Outer Diameter (inches)
0.33
Typical Applications
Medium light levels, high pulse response detection
Voltage Bias, VBias (V)
-50
Active Area (mm2 )
5.1
Responsivity @ 900nm (A/W)
0.62
Noise Equivalent Power NEP (W/ Hz1/2 )
1.3 x 10-13
Detectivity (cmHz1/2 /W)
1.74 x 1012 @ -50V, 950nm
Terminal Capacitance (pF)
28 @ 0V; 3.5 @ 50V
Dark Current Id (nA)
12 @ 50V
Maximum Breakdown Voltage (V)
75 @10µA
Rise Time (ns)
2 @ 60V/50Ω, 670nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, High Speed Response, 15.0mm2
#55-338
$79.00
Type
Biased: High Speed Response Borosilicate Window
Operating Temperature (°C)
-40 to 110
Length of Leads (inches)
0.5
Outer Diameter (inches)
0.33
Typical Applications
Medium light levels, high pulse response detection
Voltage Bias, VBias (V)
-50
Active Area (mm2 )
15.0
Responsivity @ 900nm (A/W)
0.62
Noise Equivalent Power NEP (W/ Hz1/2 )
2.0 x 10-13
Detectivity (cmHz1/2 /W)
1.94 x 1012 @ -50V, 950nm
Terminal Capacitance (pF)
82 @ 0V; 26 @ 5V
Dark Current Id (nA)
35 @ 50V
Maximum Breakdown Voltage (V)
75 @10µA
Rise Time (ns)
2 @ 60V/50Ω, 670nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, Blue Enhanced Response, 0.81mm2
#57-508
$28.00
Type
Unbiased: Blue Enhanced Response Quartz Window
Operating Temperature (°C)
-10 to 60
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
0.81
Responsivity @ 410nm (A/W)
0.2
Noise Equivalent Power NEP (W/ Hz1/2 )
2.0 x 10-14
Detectivity (cmHz1/2 /W)
4.5 x 1012 @ 0V, 410nm
Terminal Capacitance (pF)
60 @ 0V
Saturation Current, Isat (mA)
0.5
Shunt Resistance (MΩ)
600
Rise Time (μs)
0.02 @ 0V/50Ω, 410nm
Mount
TO-18
RoHS
Compliant
Silicon Detector, Blue Enhanced Response, 5.1mm2
#53-378
$35.00
Type
Unbiased: Blue Enhanced Response Quartz Window
Operating Temperature (°C)
-40 to 100
Length of Leads (inches)
1.5
Outer Diameter (inches)
0.36
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
5.1
Responsivity @ 410nm (A/W)
0.2
Noise Equivalent Power NEP (W/ Hz1/2 )
5.2 x 10-14
Detectivity (cmHz1/2 /W)
4.34 x 1012 @ 0V, 410nm
Terminal Capacitance (pF)
450 @ 0V
Saturation Current, Isat (mA)
2.0
Shunt Resistance (MΩ)
150
Rise Time (μs)
0.2 @ 0V/50Ω, 410nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, Blue Enhanced Response, 100.0mm2
#53-379
$108.00
Type
Unbiased: Blue Enhanced Response Quartz Window
Operating Temperature (°C)
-10 to 60
Length of Leads (inches)
BNC
Outer Diameter (inches)
0.98
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
100.0
Responsivity @ 410nm (A/W)
0.2
Noise Equivalent Power NEP (W/ Hz1/2 )
2.0 x 10-13
Detectivity (cmHz1/2 /W)
5.0 x 1012 @ 0V, 410nm
Terminal Capacitance (pF)
8800 @ 0V
Saturation Current, Isat (mA)
10.0
Shunt Resistance (MΩ)
10
Rise Time (μs)
2.0 @ 0V/50Ω, 410nm
Mount
BNC
RoHS
Compliant
Silicon Detector, Low Noise Response, 5.1mm2
#54-522
$59.00
Type
Unbiased: Low Noise Response Borosilicate Window
Operating Temperature (°C)
-40 to 110
Length of Leads (inches)
0.5
Outer Diameter (inches)
0.33
Typical Applications
Low light levels, long integration times
Voltage Bias, VBias (V)
-5
Active Area (mm2 )
5.1
Responsivity @ 900nm (A/W)
0.62
Noise Equivalent Power NEP (W/ Hz1/2 )
1.8 x 10-14
Detectivity (cmHz1/2 /W)
1.25 x 1013 @ -5V, 950nm
Terminal Capacitance (pF)
87 @ 0V; 2 @ 10V
Saturation Current, Isat (mA)
0.51
Shunt Resistance (MΩ)
600
Rise Time (ns)
15 @ 5V/50Ω, 670nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, Low Noise Response, 100.0mm2
#57-513
$135.00
Type
Unbiased: Low Noise Response Borosilicate Window
Operating Temperature (°C)
-20 to 75
Typical Applications
Low light levels, long integration times
Voltage Bias, VBias (V)
-5
Active Area (mm2 )
100.0
Responsivity @ 900nm (A/W)
0.62
Noise Equivalent Power NEP (W/ Hz1/2 )
8.6 x 10-14
Detectivity (cmHz1/2 /W)
1.2 x 1013 @ -5V, 950nm
Terminal Capacitance (pF)
1700 @ 0V; 500 @ 5V
Saturation Current, Isat (mA)
10.0
Shunt Resistance (MΩ)
30
Rise Time (ns)
200 @ 5V/50Ω, 670nm
RoHS
Compliant
Silicon Detector, UV Enhanced Response, 0.8mm2
#57-509
$42.00
Type
Unbiased: UV Enhanced Response Quartz Window
Operating Temperature (°C)
-20 to 60
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
0.8
Responsivity @ 254nm (A/W)
0.14
Noise Equivalent Power NEP (W/ Hz1/2 )
6.4 x 10-14
Detectivity (cmHz1/2 /W)
1.4 x 1012 @ 0V, 254nm
Terminal Capacitance (pF)
60 @ 0V
Saturation Current, Isat (mA)
0.1
Shunt Resistance @ V=-10mV (MΩ)
500
Rise Time (μs)
0.2 @ 0V/50Ω, 254nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, UV Enhanced Response, 5.1mm2
#53-375
$58.00
Type
Unbiased: UV Enhanced Response Quartz Window
Operating Temperature (°C)
-20 to 60
Length of Leads (inches)
1.5
Outer Diameter (inches)
0.36
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
5.1
Responsivity @ 254nm (A/W)
0.14
Noise Equivalent Power NEP (W/ Hz1/2 )
1.0 x 10-13
Detectivity (cmHz1/2 /W)
2.26 x 1012 @ 0V, 254nm
Terminal Capacitance (pF)
300 @ 0V
Saturation Current, Isat (mA)
0.1
Shunt Resistance @ V=-10mV (MΩ)
200
Rise Time (μs)
0.9 @ 0V/50Ω, 254nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, UV Enhanced Response, 15mm2
#57-510
$58.00
Type
Unbiased: UV Enhanced Response Quartz Window
Operating Temperature (°C)
-20 to 60
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
15.0
Responsivity @ 254nm (A/W)
0.14
Noise Equivalent Power NEP (W/ Hz1/2 )
1.4 x 10-13
Detectivity (cmHz1/2 /W)
2.8 x 1012 @ 0V, 254nm
Terminal Capacitance (pF)
800 @ 0V
Saturation Current, Isat (mA)
0.1
Shunt Resistance @ V=-10mV (MΩ)
100
Rise Time (μs)
2.0 @ 0V/50Ω, 254nm
Mount
TO-5
RoHS
Compliant
Silicon Detector, UV Enhanced Response, 20.0mm2
#54-036
$52.00
Type
Unbiased: UV Enhanced Response Quartz Window
Operating Temperature (°C)
-20 to 60
Length of Leads (inches)
1.5
Outer Diameter (inches)
0.55
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
20.0
Responsivity @ 254nm (A/W)
0.14
Noise Equivalent Power NEP (W/ Hz1/2 )
2.0 x 10-13
Detectivity (cmHz1/2 /W)
2.24 x 1012 @ 0V, 254nm
Terminal Capacitance (pF)
1000 @ 0V
Saturation Current, Isat (mA)
0.1
Shunt Resistance @ V=-10mV (MΩ)
50
Rise Time (μs)
2.0 @ 0V/50Ω, 254nm
Mount
TO-8
RoHS
Compliant
Silicon Detector, UV Enhanced Response, 35.0mm2
#54-037
$82.00
Type
Unbiased: UV Enhanced Response Quartz Window
Operating Temperature (°C)
-10 to 60
Length of Leads (inches)
1.5
Outer Diameter (inches)
0.55
Typical Applications
Low light levels, wide spectral bandwidth response
Voltage Bias, VBias (V)
O
Active Area (mm2 )
35.0
Responsivity @ 254nm (A/W)
0.14
Noise Equivalent Power NEP (W/ Hz1/2 )
1.7 x 10-13
Detectivity (cmHz1/2 /W)
3.48 x 1012 @ 0V, 254nm
Terminal Capacitance (pF)
1600 @ 0V
Saturation Current, Isat (mA)
0.1
Shunt Resistance @ V=-10mV (MΩ)
30
Rise Time (μs)
3.0 @ 0V/50Ω, 254nm
Mount
TO-8
RoHS
Compliant